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Type: Artigo de evento
Title: Doping Effects On Variable Optical Band Gap Amorphous Silicon Nitride Compounds.
Author: Chambouleyron I.
Alvarez F.
Constantino C.
Cisneros J.I.
Abstract: Doping effects were studied in variable band gap a-SiN//x:H. The material is potentially useful for the window side of a-Si:H p-i-n solar cells. Samples produced in a capacitively coupled glow discharge system were prepared from a gaseous mixture of SiH//4 and N//2. In maintaining identical growth parameters, the optical band gap can be varied in a continuous way by changing the RF power delivered to the plasma. Our experiments show that changes in conductivity and photoconductivity depend on i) nature of the dopant gas; ii) dopant concentration and iii) relative nitrogen content in the network. The differences appearing between boron and phosphorous doping are explained in terms of different bonding configuration for both atoms.
Editor: D. Reidel Publ Co, Dordrecht, Neth
Rights: fechado
Identifier DOI: 
Date Issue: 1984
Appears in Collections:Unicamp - Artigos e Outros Documentos

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