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|Type:||Artigo de evento|
|Title:||Doping Effects On Variable Optical Band Gap Amorphous Silicon Nitride Compounds.|
|Abstract:||Doping effects were studied in variable band gap a-SiN//x:H. The material is potentially useful for the window side of a-Si:H p-i-n solar cells. Samples produced in a capacitively coupled glow discharge system were prepared from a gaseous mixture of SiH//4 and N//2. In maintaining identical growth parameters, the optical band gap can be varied in a continuous way by changing the RF power delivered to the plasma. Our experiments show that changes in conductivity and photoconductivity depend on i) nature of the dopant gas; ii) dopant concentration and iii) relative nitrogen content in the network. The differences appearing between boron and phosphorous doping are explained in terms of different bonding configuration for both atoms.|
|Editor:||D. Reidel Publ Co, Dordrecht, Neth|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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