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|Type:||Artigo de periódico|
|Title:||Electron Spin Resonance In Amorphous Silicon Doped With Gd|
|Abstract:||ESR experiments on Gd impurities in amorphous silicon between liquid-He and room temperatures show three resonances which could be ascribed to paramagnetic dangling bonds (g=2.00550.0005), to Gd S7/28 states (g=1.9970.005), and to a new paramagnetic center (g=2.100.05) associated with the presence of Gd atoms. For low-Gd-concentration samples the intensity of the resonance due to dangling bonds decreases as the Gd concentration increases and the intensity of the new paramagnetic center is found to increase with increasing temperature. These results indicate, as we recently found for other rare-earthelement impurities in a-Si, that a fraction of the Gd atoms act as acceptor impurities with associated loosely bound holes in the a-Si valence-band tail which are responsible for the resonance of the new paramagnetic center observed at a g value of 2.100.05. © 1989 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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