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|Type:||Artigo de periódico|
|Title:||Photoelectronic Properties Of Amorphous Silicon Nitride Compounds|
|Abstract:||We present results on the photoconductivity and optical transmission of hydrogenated silicon nitride compounds prepared by the glow discharge decomposition of silane and nitrogen. Samples having different nitrogen content and dopant impurity concentrations were analyzed. Photoconductivity measurements permitted the extension of absorption coefficient data down to nearly 1 cm-1. The photoconductivity onset was related to the dark activation energy. It is shown that for undoped samples, the electrons are the majority carrier. For undoped and lightly boron doped samples, a supralinear dependence of the photocurrent on light intensity is found within the illumination range ≈1010 -1013 photons cm-2s-1. Light boron doping unsensitizes the material, while heavy doping sensitizes it again. The opposite behaviour is found with phosphorus doping. The supralinear behaviour is interpreted assuming two types of defect centers, having energies that are located above and below the dark quasi-Fermi level. These two defect centres possess a large difference in their electron capture cross section. For a monochromatic light illumination level greater than ≈1013 photons cm-2s-1, all the samples show a linear dependence of photocurrent on light intensity. Undoped samples having an optical gap of nearly 2 eV possess a trap controlled drift mobility of ≈0.83×10-5 cm2/V s. © 1984.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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