Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98529
Type: Artigo de periódico
Title: Doping Effects In Off-stoichiometric Glow Discharge Amorphous Silicon Nitride
Author: Alvarez F.
Chambouleyron I.
Constantino C.
Cisneros J.I.
Abstract: The effects of boron and phosphorus doping on the electrical properties of a-SiNx:H films are studied. The material is obtained by the glow discharge of SiH4 and N2 mixtures. It is found that for Si-rich materials boron doping produces large conductivity variations while phosphorus appears to be a much less efficient dopant. A phenomenological explanation is given assuming that phosphorus prefers to form bonds in accordance with its own valence configuration; i.e., it will go substitutionally to threefold coordinated N sites. Experimental evidence of such behavior obtained from published IR transmission measurements confirms this assumption.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.94569
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0021121105&partnerID=40&md5=1b97cfc0b79aebb00d4692d97c110dab
Date Issue: 1984
Appears in Collections:Unicamp - Artigos e Outros Documentos

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