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|Type:||Artigo de periódico|
|Title:||Transport Properties Of Highly Doped Polycrystalline And Amorphous Sno2 Films|
|Abstract:||The Hall effect in the temperature range 80 500 K has been measured in sprayed SnO2 films deposited at low substrate temperatures, 220 440°C. The data indicate the classical behavior of degenerate semiconductors for polycrystalline films prepared at Ts350°C. With the lowering of Ts, the conduction ceases to be metallic either due to the incorporation of excess Cl donor impurities or the appearance of the amorphous state when Ts<300°C. We interpret the Hall-effect data by a generalized two-band model where a fraction of the electronic states remains strongly localized. Quantitative estimates are given for two types of disorder: a distribution of Cl impurity atoms in a polycrystalline matrix, and an amorphous host-lattice structure. The mobility of amorphous SnO2 was measured down to 80 K and the values between 0.4 (80 K) and 1.5 cm2 V-1 s-1 (500 K) are compatible with electron transport via extended states in both the conduction-band and impurity-band regimes. © 1985 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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