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Type: Artigo de periódico
Title: Upper Bound For The Amplitude Of Cdw's In Highly Excited Gaas And Ingaasp
Author: Borba G.L.
Prince F.C.
Patel N.
de Castro A.R.B.
Abstract: We measured, as a function of position along the stripe, the intensity of luminescence emitted normally to the junction plane in GaAs/GaAlAs and InGaAsP/InP LED's. We set an upper bound p=0.1 for the depth of modulation in the carrier density under highly excited conditions such that the non-equilibrium carrier density and effective temperature exceed the threshold and enter the domain where formation of CDW's is possible. © 1985.
Rights: fechado
Identifier DOI: 10.1016/0038-1098(85)90617-9
Date Issue: 1985
Appears in Collections:Unicamp - Artigos e Outros Documentos

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