Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98467
Type: Artigo de periódico
Title: Upper Bound For The Amplitude Of Cdw's In Highly Excited Gaas And Ingaasp
Author: Borba G.L.
Prince F.C.
Patel N.
de Castro A.R.B.
Abstract: We measured, as a function of position along the stripe, the intensity of luminescence emitted normally to the junction plane in GaAs/GaAlAs and InGaAsP/InP LED's. We set an upper bound p=0.1 for the depth of modulation in the carrier density under highly excited conditions such that the non-equilibrium carrier density and effective temperature exceed the threshold and enter the domain where formation of CDW's is possible. © 1985.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0038-1098(85)90617-9
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022092640&partnerID=40&md5=7e949ac3233485886ffaeda558212eaa
Date Issue: 1985
Appears in Collections:Unicamp - Artigos e Outros Documentos

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