Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98448
Type: Artigo de periódico
Title: On The Influence Of An External D.c. Substrate Bias On Boron And Phosphorus Doping Efficiencies In A-si:h
Author: Alvarez F.
Chambouleyron I.
Gobbi A.
Mendonca C.
Castro F.L.
Abstract: The influence of a substrate D.C. polarization on the doping efficiency in a-Si:H is reported. Intrinsic layers of solar cells and n-i-n structures were also grown under different substrate polarizations and their influence on i-layer properties is discussed. © 1985.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0022-3093(85)90714-8
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022215493&partnerID=40&md5=8fa0a3352f5a6c911841472ee85841a5
Date Issue: 1985
Appears in Collections:Unicamp - Artigos e Outros Documentos

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