Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98444
Type: Artigo de periódico
Title: On The Optical Absorption Properties Of A Homogeneously Doped Gaas - Ga1-xalxas Quantum Well
Author: Oliveira L.E.
Perez-Alvarez R.
Abstract: The optical absorption spectra associated with transitions between the n = 1 valence (conduction) subband and the donor (acceptor) impurity band were calculated for both the infinite and the finite GaAs-Ga1-xAlxAs quantum wells. The main features observed in the theoretical spectra are an absorption edge associated with transitions involving impurities at the center of the well and a peak related with impurities at the edges of the well. For the infinite quantum well we obtained results which are quite different from those previously reported. © 1989.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0038-1098(89)90943-5
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024668050&partnerID=40&md5=4a41146fb69acb45bbea0bb617e63e0c
Date Issue: 1989
Appears in Collections:Unicamp - Artigos e Outros Documentos

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