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|Type:||Artigo de periódico|
|Title:||On The Optical Absorption Properties Of A Homogeneously Doped Gaas - Ga1-xalxas Quantum Well|
|Abstract:||The optical absorption spectra associated with transitions between the n = 1 valence (conduction) subband and the donor (acceptor) impurity band were calculated for both the infinite and the finite GaAs-Ga1-xAlxAs quantum wells. The main features observed in the theoretical spectra are an absorption edge associated with transitions involving impurities at the center of the well and a peak related with impurities at the edges of the well. For the infinite quantum well we obtained results which are quite different from those previously reported. © 1989.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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