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Type: Artigo de periódico
Title: Central-cell And Screening Effects On The Binding Energies Of Neutral Chalcogen Impurities In Silicon
Author: Oliveira L.E.
Falicov L.M.
Abstract: The binding energies of D0 states in S-, Se-, and Te-doped silicon crystals are calculated within a variational scheme in the effective-mass approximation and with a Chandrasekhar-type variational function for the two-electron envelopes. Central cells are modeled with a constant core potential within the impurity sphere. Screening effects for the potential and the electron-electron interaction are taken into account by means of a position-dependent dielectric function. Results are compared with recent theoretical and experimental work. It is found that central-cell effects and position-dependent screening are essential to account for the experimental data. © 1986 The American Physical Society.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.33.8765
Date Issue: 1986
Appears in Collections:Unicamp - Artigos e Outros Documentos

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