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|Type:||Artigo de periódico|
|Title:||Central-cell And Screening Effects On The Binding Energies Of Neutral Chalcogen Impurities In Silicon|
|Abstract:||The binding energies of D0 states in S-, Se-, and Te-doped silicon crystals are calculated within a variational scheme in the effective-mass approximation and with a Chandrasekhar-type variational function for the two-electron envelopes. Central cells are modeled with a constant core potential within the impurity sphere. Screening effects for the potential and the electron-electron interaction are taken into account by means of a position-dependent dielectric function. Results are compared with recent theoretical and experimental work. It is found that central-cell effects and position-dependent screening are essential to account for the experimental data. © 1986 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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