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Type: Artigo de periódico
Title: Steady State Of Photoexcited Plasma In Semiconductors
Author: Tome T.
Abstract: The nonequilibrium macroscopic state of a polar semiconductor under constant laser illumination is studied. The values of the relevant steady-state thermodynamic parameters are determined. They are the solutions of generalized transport equations derived using the nonequilibrium statistical operator method. Numerical results are obtained for the case of GaAs. © 1986.
Rights: fechado
Identifier DOI: 10.1016/0038-1098(86)90368-6
Date Issue: 1986
Appears in Collections:Unicamp - Artigos e Outros Documentos

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