Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Temperature And Light Intensity Dependence Of Photoconductivity In Off-stoichiometric Hydrogenated Amorphous Silicon Nitride|
|Abstract:||Temperature and light intensity dependence of photoconductivity under monochromatic excitation in off-stoichiometric amorphous silicon nitride alloys are presented. The samples, intrinsic, n- and p-doped, were prepared in a capacitively coupled RF glow discharge system by the decomposition of a silane and nitrogen gas mixture of fixed composition. Nitrogen content was controlled by the density of RF power delivered to the reactor chamber. In samples with low nitrogen content the main conduction mechanism at low temperature is probably hopping. However, as the nitrogen content increases the conduction at low temperature become mainly through extended states. Phosphorus doping widens the optical gap and reduces photoconductivity. Light boron doping reduces the photoconductivity and heavy boron doping increases it again, due to a change from electron to hole conduction. In boron-doped samples the low temperature hole conduction is probably by hopping, independently of the nitrogen content. In nitrogen-rich as well as in phosphorus-doped specimens a structure in the photocurrent-versus-temperature plot was found. This is interpreted as due to an increase in the density of states in the pseudogap between the Fermi level and the conduction band. © 1986.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.