Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98312
Type: Artigo de periódico
Title: Negative Conductance And Sequential Tunneling In Amorphous Silicon-silicon Carbide Double Barrier Devices
Author: Pereyra I.
Carreno M.P.
Alvarez F.
Abstract: Negative conductance has been observed in the electronic transport perpendicular to hydrogenated amorphous silicon carbide/amorphous silicon double-barrier structures at low temperatures. Some devices present negative resistance even at room temperature. These results are consistent with a sequential tunneling phenomenon. © 1989.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0022-3093(89)90254-8
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024717324&partnerID=40&md5=1e7ed40731238d5dc5fdaec8ff43a8e5
Date Issue: 1989
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-0024717324.pdf282.06 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.