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Type: Artigo de periódico
Title: Negative Conductance And Sequential Tunneling In Amorphous Silicon-silicon Carbide Double Barrier Devices
Author: Pereyra I.
Carreno M.P.
Alvarez F.
Abstract: Negative conductance has been observed in the electronic transport perpendicular to hydrogenated amorphous silicon carbide/amorphous silicon double-barrier structures at low temperatures. Some devices present negative resistance even at room temperature. These results are consistent with a sequential tunneling phenomenon. © 1989.
Rights: fechado
Identifier DOI: 10.1016/0022-3093(89)90254-8
Date Issue: 1989
Appears in Collections:Unicamp - Artigos e Outros Documentos

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