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|Type:||Artigo de periódico|
|Title:||Polar Semiconductors Under Continuous Photoexcitation|
|Abstract:||The nonequilibrium thermodynamic state of a highly excited plasma in direct-gap polar semiconductors under conditions of continuous laser illumination is studied using the nonequilibrium statistical operator method. We obtain the set of coupled nonlinear generalized transport equations for the basic set of thermodynamic variables chosen for the description of the macroscopic state of the system. These equations are solved for the specific case of GaAs, to describe the transient regime and to obtain the steady-state values of the macrovariables in terms of the laser power. The rates of energy pumping and of energy transfer through the different relaxation channels are also given. Finally, we comment on the stability of the uniform steady-state solution. © 1987.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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