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|Type:||Artigo de periódico|
|Title:||Simple Model For Resonant Tunneling Beyond The Effective-mass Approximation|
Goncalves Da Silva C.E.T.
|Abstract:||We evaluate, within a single-band tight-binding model, the resonant transmission probability for a particle through a symmetric barrier-well-barrier potential structure. This is a simplified model of resonant tunneling through (Ga,Al)As-GaAs-(Ga,Al)As heterostructure. We examine both the cases of minimum of the band states at the center (direct-gap tunneling) and at the edge (indirect-gap tunneling) of the Brillouin zone for the barrier material. We show that only the lowest traveling-wave energy states, irrespective of their symmetry, dominate the tunneling. © 1987 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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