Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98176
Type: Artigo
Title: IR Raman spectroscopy with semiconductor devices for excitation and detection
Author: Castro, A.R.B. de
Pedreira, Paulo R.B.
Abstract: We describe a Raman spectrometer with no moving parts based on a GaAlAs single longitudinal mode diode laser for excitation and a cooled Si diode array fopr detection. The measured performance was a factor of three worse than calculated. The calculated performance can be enhanced by more than three orders of magnitude with a few practical improvements and more powerful laser sources. © 1987.
We describe a Raman spectrometer with no moving parts based on a GaAlAs single longitudinal mode diode laser for excitation and a cooled Si diode array fopr detection. The measured performance was a factor of three worse than calculated. The calculated performance can be enhanced by more than three orders of magnitude with a few practical improvements and more powerful laser sources.
Subject: Radiação infravermelha
Lasers semicondutores
Espectroscopia Raman
Country: Holanda
Editor: Elsevier
Citation: Optics Communications. , v. 62, n. 5, p. 348 - 350, 1987.
Rights: fechado
Identifier DOI: 10.1016/0030-4018(87)90303-8
Address: https://www.sciencedirect.com/science/article/pii/0030401887903038
Date Issue: 1987
Appears in Collections:IFGW - Artigos e Outros Documentos

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