Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98169
Type: Artigo de periódico
Title: Metastable Defects In Gaas Grown By Metalorganic Chemical Vapor Deposition: Dependence On The V/iii Ratio
Author: Tabata A.S.
Pudensi M.A.A.
Machado A.M.
Abstract: Metastable defects in GaAs samples grown by metalorganic chemical vapor deposition were analyzed as a function of arsine to trimethylgalium ratio, using deep-level transient spectroscopy and isochronal annealing. The data have shown that metastability is related to the presence of an electron level 0.33 eV below the conduction band which is independent on the As/Ga ratio. Arsenic interstitials could be responsible for this level.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.343338
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0007702076&partnerID=40&md5=0609b7d4d5f684c8b7c963873f184bb5
Date Issue: 1989
Appears in Collections:Unicamp - Artigos e Outros Documentos

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