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Type: Artigo de periódico
Title: Evidence Of Quantum Size Effects In A-si:h/a-sicx:h Superlattices. Observation Of Negative Resistance In Double Barrier Structures
Author: Pereyra I.
Carreno M.N.P.
Onmori R.K.
Sassaki C.A.
Andrade A.M.
Alvarez F.
Abstract: Variations in the optical gap, in the parallel conductivity and in the conductivity activation energy were observed in A-Si:H/a-SiCx:H multilayers. These results are consistent with the existence of bounded states in the a-Si wells. Also, non linearities in the current vs. voltage curves of multiple a-SiCx:H barriers embedded in the intrinsic layer of n-i-n a-Si:H structures were studied. Several cases of negative resistence, even at room temperature, were found. These results are consistent with a "sequential tunneling" phenomenon, although a bulk effect cannot be ruled out. © 1987.
Rights: fechado
Identifier DOI: 10.1016/0022-3093(87)90209-2
Date Issue: 1987
Appears in Collections:Unicamp - Artigos e Outros Documentos

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