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|Type:||Artigo de periódico|
|Title:||Evidence Of Quantum Size Effects In A-si:h/a-sicx:h Superlattices. Observation Of Negative Resistance In Double Barrier Structures|
|Abstract:||Variations in the optical gap, in the parallel conductivity and in the conductivity activation energy were observed in A-Si:H/a-SiCx:H multilayers. These results are consistent with the existence of bounded states in the a-Si wells. Also, non linearities in the current vs. voltage curves of multiple a-SiCx:H barriers embedded in the intrinsic layer of n-i-n a-Si:H structures were studied. Several cases of negative resistence, even at room temperature, were found. These results are consistent with a "sequential tunneling" phenomenon, although a bulk effect cannot be ruled out. © 1987.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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