Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98168
Type: Artigo de periódico
Title: Evidence Of Quantum Size Effects In A-si:h/a-sicx:h Superlattices. Observation Of Negative Resistance In Double Barrier Structures
Author: Pereyra I.
Carreno M.N.P.
Onmori R.K.
Sassaki C.A.
Andrade A.M.
Alvarez F.
Abstract: Variations in the optical gap, in the parallel conductivity and in the conductivity activation energy were observed in A-Si:H/a-SiCx:H multilayers. These results are consistent with the existence of bounded states in the a-Si wells. Also, non linearities in the current vs. voltage curves of multiple a-SiCx:H barriers embedded in the intrinsic layer of n-i-n a-Si:H structures were studied. Several cases of negative resistence, even at room temperature, were found. These results are consistent with a "sequential tunneling" phenomenon, although a bulk effect cannot be ruled out. © 1987.
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Rights: fechado
Identifier DOI: 10.1016/0022-3093(87)90209-2
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-45949116027&partnerID=40&md5=885c2edfae8251fda122d8572ad91b81
Date Issue: 1987
Appears in Collections:Unicamp - Artigos e Outros Documentos

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