Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98166
Type: Artigo de periódico
Title: Visible Light Emission From Reverse Biased Amorphous Silicon Carbide P-i-n Structures
Author: Alvarez F.
Fragnito H.L.
Prieto P.
Chambouleyron I.
Abstract: The emission at room temperature of visible light (near infrared) from reverse biased (forward biased) silicon carbide p-i-n heterostructures is reported. The mechanisms of carrier injection at room and at low temperatures are studied. An exciton-like recombination mechanism explains both, the short recombination time and the improved efficiency observed in samples with higher carbon concentration. © 1987.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0022-3093(87)90316-4
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-45949117851&partnerID=40&md5=6e1ac3b6f1193e7e5d6e1e024449cc77
Date Issue: 1987
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-45949117851.pdf181.5 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.