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Type: Artigo de periódico
Title: Visible Light Emission From Reverse Biased Amorphous Silicon Carbide P-i-n Structures
Author: Alvarez F.
Fragnito H.L.
Prieto P.
Chambouleyron I.
Abstract: The emission at room temperature of visible light (near infrared) from reverse biased (forward biased) silicon carbide p-i-n heterostructures is reported. The mechanisms of carrier injection at room and at low temperatures are studied. An exciton-like recombination mechanism explains both, the short recombination time and the improved efficiency observed in samples with higher carbon concentration. © 1987.
Rights: fechado
Identifier DOI: 10.1016/0022-3093(87)90316-4
Date Issue: 1987
Appears in Collections:Unicamp - Artigos e Outros Documentos

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