Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Narrow Stripe Graded Barrier Single Quantum Well Lasers - Threshold Current Considerations.|
|Author:||Patel Navin B.|
Prince Francisco C.
Nunes Jr. A.S.
|Abstract:||Narrow-stripe graded-barrier single-quantum-well (SQW) lasers are relatively high-threshold current devices ( greater than 50 mA), even though made from wafers with extremely low broad-area threshold current density ( less than 300 A/cm**2). They also show a complex time-dependent lasing behavior with sequential lasing from the n equals 2 and n equals 1 quantum levels. It is shown here that these properties are inherent to narrow-stripe gain-guided SQW lasers and are dictated by the nature of the optical gain curve of the quantum well.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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