Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98068
Type: Artigo de periódico
Title: Spatially Dependent Screening Calculation Of Binding Energies Of Hydrogenic Impurity States In Gaas-ga1-xalxas Quantum Wells
Author: Oliveira L.E.
Abstract: The effect of spatially dependent screening is taken into account with an r-dependent dielectric response to evaluate the binding energies of shallow hydrogenic impurity states in GaAs-Ga1-xAlxAs quantum wells. A variational calculation, in the effective-mass approximation, was performed as a function of the position of the impurity in a quantum well of finite depth and for various well thicknesses. It is shown that spatially dependent screening effects can be quite important for acceptors in a GaAs-Ga1-xAlxAs quantum well due to the relatively small effective Bohr radius (22 A) of the hole. The binding energies of on-edge impurities are shown to increase, for sufficiently large well thicknesses, when the barrier potential (or the Al concentration) decreases, a behavior which contrasts with results previously reported in the literature. © 1988 The American Physical Society.
Editor: 
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.38.10641
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33646145369&partnerID=40&md5=3ec7f2b62141a52a5c7854ff241e8a94
Date Issue: 1988
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-33646145369.pdf244.33 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.