Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98065
Type: Artigo de periódico
Title: Cooling Of Hot Carriers In Highly Photoexcited Semiconductors
Author: Algarte A.C.S.
Abstract: The rate of energy loss of high-density hot electrons and holes in highly photoexcited plasma in direct-gap polar semiconductors is investigated. We compare the efficiency of the several relaxation channels, and show the relevant role played by the TO phonons. Further, we reconfirm that the rapid mutual thermalization of carriers and LO phonons produces a long plateau in the evolution curve for the carriers effective temperature. GaAs was selected for numerical computations. © 1988 The American Physical Society.
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Rights: aberto
Identifier DOI: 10.1103/PhysRevB.38.2162
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-35949010873&partnerID=40&md5=dfb792164c977b61dee1e99e60b38e12
Date Issue: 1988
Appears in Collections:Unicamp - Artigos e Outros Documentos

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