Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98045
Type: Artigo de periódico
Title: Transport In Photoexcited Hot Carriers Systems
Author: Freire V.N.
Vasconcellos A.R.
Luzzi R.
Abstract: The question of how the evolution of the nonequilibrium state of a highly photoexcited plasma in polar semiconductors (HEPS) affects the mobility of its hot carriers (photoinjected electrons and holes) is considered. General analytic expressions for the mobility, valid for a large class of experimental situations, are derived. That allows for an in depth analysis of transport properties of hot carriers in HEPS: It is demonstrated that, depending on initial conditions and experimental constraints, four different types of transient behavior may occur, namely, (i) structure (relative maxima and minima) without overshoot and a near ohmic regime in the steady state at low field intensities, (ii) structure with overshoot and non-ohmic regime in the steady state at intermediate field intensities, (iii) overshoot (no structure) and strongly non-ohmic regime at intermediate to high fields, and, (iv) normal (monotonicly increasing current) with ohmic behavior in the steady state at high fields. A general criterion for the existence of structure and/or overshoot during the mobility transient is established. Numerical calculations appropriate for electron transport in the central valley of GaAs are presented. © 1988.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0038-1101(88)90327-9
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0023978245&partnerID=40&md5=1ab7d33742f02e9e51e022a56d1443bd
Date Issue: 1988
Appears in Collections:Unicamp - Artigos e Outros Documentos

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