Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98030
Type: Artigo de periódico
Title: Infrared Photoluminescence At Deep Centres In Polycrystalline Cdse Layers
Author: Brasil M.J.S.
Motisuke P.
Decker F.
Moro J.R.
Abstract: A systematic study of the infrared photoluminescence from deep centres in polycrystalline CdSe layers is presented. The authors observe two emission bands at about 0.92 mu m and about 1.22 mu m. The evolution of the band shape and emission intensity quenching with temperature is analysed using a semiclassical model, and the characteristic parameters of the centres are obtained. The results are shown to be consistent with transitions involving selenium vacancies VSe and oxygen impurities OSe. © 1988 IOP Publishing Ltd.
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Rights: fechado
Identifier DOI: 10.1088/0022-3719/21/16/024
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0242645057&partnerID=40&md5=0aa4a63a7cf09fd9b6e24163f3e00a97
Date Issue: 1988
Appears in Collections:Unicamp - Artigos e Outros Documentos

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