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|Type:||Artigo de periódico|
|Title:||Electrical Characterization Of Epitaxial Layers Of In0.71ga 0.29as0.63p0.37|
Garcia De Carvalho M.M.
|Abstract:||We have performed measurements of carrier concentration and Hall mobility, between 4.2 K and room temperature, in InGaAsP (energy gap of 0.96 eV) epitaxial layers grown on semi-insulating InP. It is shown that for this kind of material in the range of concentration studied (2.0×101 6-1.6×1018 cm-3), alloy scattering has to be taken into account as a mechanism limiting the mobility even at low temperatures. Also, in the entire range of temperature and concentration studied, Fermi-Dirac statistics are better suited than Boltzmann statistics for theoretical calculations of Fermi energy, because even for concentrations as low as 2.0×1016 cm -3, the material is degenerated at low temperatures. Following these assumptions, we have calculated the alloy scattering potential as being between 0.52 and 0.62 eV.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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