Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98013
Type: Artigo de periódico
Title: Photoluminescence Of Gaas Films Grown By Vacuum Chemical Epitaxy
Author: Bernussi A.A.
Barreto C.L.
Carvalho M.M.G.
Motisuke P.
Abstract: GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750°C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.341859
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-36549101846&partnerID=40&md5=a7ca3c3bc2cf6a099c3801f823c28486
Date Issue: 1988
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-36549101846.pdf843.22 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.