Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/97945
Type: Artigo de periódico
Title: Shallow Impurity Levels In Gaas(ga, Al)as Quantum Wells
Author: Oliveira L.E.
Abstract: The binding energies of shallow donors and acceptors in GaAs(Ga, Al)As quantum wells were obtained as functions of the position of the impurity and GaAs slab thicknesses. It is suggested that a proper consideration of the density of impurity states may be of relevance in the interpretation of experimental data related to shallow impurities in quantum wells. The binding energies of on-edge impurities are shown to increase, for sufficiently large well thicknesses, when the barrier potential (or the Al concentration) decreases, a behavior which contrasts with results previously reported in the literature. © 1989.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0749-6036(89)90064-5
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024903343&partnerID=40&md5=aad1fe2734005afd6af19829c36363fd
Date Issue: 1989
Appears in Collections:Unicamp - Artigos e Outros Documentos

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