Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/97944
Type: Artigo de periódico
Title: Effects Of Thermal Annealing On The Confined Electronic States Of Inxga1-xas/gaas Strained-layer Superlattices
Author: Iikawa F.
Motisuke P.
Cerdeira F.
Sacilotti M.A.
Masut R.A.
Roth A.P.
Abstract: We performed simultaneous Raman and absorption measurements on a In0.12Ga0.88As/GaAs strained layer superlattice which was submitted to annealing at 850°C. The observed changes in both types of spectra are used to construct a superlattice profile for the annealed sample from which we obtain values for the band off-set parameter (Qe), the interdiffusion coefficient (D) and the overall lattice constant of the annealed superlattice. © 1989.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0749-6036(89)90299-1
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024903946&partnerID=40&md5=5aec550457089b70cf8e35fc665ce21a
Date Issue: 1989
Appears in Collections:Unicamp - Artigos e Outros Documentos

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