Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/97730
Type: Artigo de periódico
Title: Theory Of Bound States Induced By Disorder And Isoelectronic Potentials: Ga(as,p):n
Author: Kleiman G.G.
Abstract: A theory is presented in which bound states arising from a combination of long-range and short-range isoelectronic potentials are shown to account for recent experimental data in Ga(As,P):N. These results alter our physical picture in this system. Numerical calculations agree with experiment. They indicate that the long-range potential may correspond to a deformation potential which arises from a uniform, slowly varying dilation of the lattice constant in the region of the nitrogen atom. Analysis of experimental data suggests an expansion of 0.9% of the lattice constant. © 1977 The American Physical Society.
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Rights: aberto
Identifier DOI: 10.1103/PhysRevB.15.802
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-5344244048&partnerID=40&md5=de5bd214ee11d08cf3b40a953a99581a
Date Issue: 1977
Appears in Collections:Unicamp - Artigos e Outros Documentos

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