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|Type:||Artigo de periódico|
|Title:||Theory Of Bound States Induced By Disorder And Isoelectronic Potentials: Ga(as,p):n|
|Abstract:||A theory is presented in which bound states arising from a combination of long-range and short-range isoelectronic potentials are shown to account for recent experimental data in Ga(As,P):N. These results alter our physical picture in this system. Numerical calculations agree with experiment. They indicate that the long-range potential may correspond to a deformation potential which arises from a uniform, slowly varying dilation of the lattice constant in the region of the nitrogen atom. Analysis of experimental data suggests an expansion of 0.9% of the lattice constant. © 1977 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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