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|Type:||Artigo de periódico|
|Title:||Fabrication And Electrical Properties Of Epitaxial Layers Of Gaas Doped With Manganese† † Work Supported In Part By Telebrás, Cnpq, Fapesp, Bid, Bnde.|
|Abstract:||The method of fabrication of epitaxial layers of GaAs doped with Mn is described. Resistivity and Hall effect measurements are made on various samples in the temperature range 77-300°K. The experimental results are used to determine the densities Na, Nd of acceptors and compensating donors, the activation energy Ea of the acceptor level associated with Mn and also the mobility of the carriers. These values are calculated using a model involving the two valence bands carriers. The results obtained confirm that the acceptor doping presents a saturation. They are compared to results previously published. A new value, rather close to unity, is obtained for the distribution coefficient of Mn in the case of low doping. © 1977.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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