Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/97725
Type: Artigo de periódico
Title: Absorption Edge Effects On The Temperature Dependence Of Threshold Currents In Gaas Laser Diodes
Author: Winigradoff N.N.
Sacilotti M.A.
Abstract: The loss α, governing the threshold current in GaAs laser diodes is attributed to absorptive transitions involving tail states rather than free carriers. The determination of α from lasing photon energy and absorption edge data for compensated and uncompensated material yield a temperature dependence of α which can account for the temperature dependence of threshold currents observed experimentally. © 1977.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0038-1098(77)91398-9
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0017489479&partnerID=40&md5=baa1d6bbe48af7a7de6461ccad0a7b88
Date Issue: 1977
Appears in Collections:Unicamp - Artigos e Outros Documentos

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