Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/97723
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampVasconcellos, Aurea Rosaspt_BR
dc.contributor.authorunicampTurtelli, Reiko Satopt_BR
dc.contributor.authorunicampCastro, Antonio Rubens Britto dept_BR
dc.typeArtigopt_BR
dc.titleRaman scattering from optically pumped electron-hole plasma in insulating Gaaspt_BR
dc.contributor.authorVasconcellos, A. R.pt_BR
dc.contributor.authorTurtelli, R. S.pt_BR
dc.contributor.authorCastro, A. R. B. dept_BR
dc.subjectSemicondutores de arsenieto de gáliopt_BR
dc.subject.otherlanguageGallium arsenide semiconductorspt_BR
dc.description.abstractWe measured the single particle Raman Scattering from an optically pumped electron-hole plasma in bulk insulating GaAs, using IR radiation of 1.06 ?m to both excite and probe the plasma. The relevant theory is derived in terms of a Landau generalized quasi-particle picture and we show how many-body effects are discernible in the spectrum. The results of the experiment lend independent support to the model of two-photon absorption in GaAs and allowed us to place a lower bound of 1 × 1016 cm-3 for the threshold of saturation effects in the density of photo-generated electron-hole pairs in bulk GaAs.pt
dc.description.abstractWe measured the single particle Raman Scattering from an optically pumped electron-hole plasma in bulk insulating GaAs, using IR radiation of 1.06 μm to both excite and probe the plasma. The relevant theory is derived in terms of a Landau generalized quasi-particle picture and we show how many-body effects are discernible in the spectrum. The results of the experiment lend independent support to the model of two-photon absorption in GaAs and allowed us to place a lower bound of 1 × 1016 cm-3 for the threshold of saturation effects in the density of photo-generated electron-hole pairs in bulk GaAs.pt_BR
dc.relation.ispartofSolid state communicationspt_BR
dc.relation.ispartofabbreviationSolid state commun.pt_BR
dc.publisher.cityOxfordpt_BR
dc.publisher.countryReino Unidopt_BR
dc.publisherPergamon Presspt_BR
dc.date.issued1977pt_BR
dc.date.monthofcirculationApr.pt_BR
dc.identifier.citationSolid State Communications. , v. 22, n. 2, p. 97 - 102, 1977.pt_BR
dc.language.isoengpt_BR
dc.description.issuenumber22pt_BR
dc.description.issuespecial2pt_BR
dc.description.firstpage97pt_BR
dc.description.lastpage102pt_BR
dc.rightsfechadopt_BR
dc.sourceSCOPUSpt_BR
dc.identifier.issn0038-1098pt_BR
dc.identifier.eissn1879-2766pt_BR
dc.identifier.doi10.1016/0038-1098(77)90409-4pt_BR
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/0038109877904094pt_BR
dc.description.sponsorshipFUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPpt_BR
dc.description.sponsorshipFINANCIADORA DE ESTUDOS E PROJETOS - FINEPpt_BR
dc.description.sponsorshipCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQpt_BR
dc.description.sponsorship1FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorship1CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsorship1FINEP - FINANCIADORA DE ESTUDOS E PROJETOSpt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.date.available2015-06-30T12:53:38Z
dc.date.available2015-11-26T14:34:53Z-
dc.date.accessioned2015-06-30T12:53:38Z
dc.date.accessioned2015-11-26T14:34:53Z-
dc.description.provenanceMade available in DSpace on 2015-06-30T12:53:38Z (GMT). No. of bitstreams: 1 2-s2.0-0017480788.pdf: 502803 bytes, checksum: 79019e0a93d1706bb345166e8c650368 (MD5) Previous issue date: 1977 Bitstreams deleted on 2020-07-03T19:06:07Z: 2-s2.0-0017480788.pdf,. Added 1 bitstream(s) on 2020-07-03T19:11:46Z : No. of bitstreams: 2 2-s2.0-0017480788.pdf: 477236 bytes, checksum: 328dd0016f38e46d0d8777bcf685b539 (MD5) 2-s2.0-0017480788.pdf.txt: 20908 bytes, checksum: 9e79732ba361ea87edc9563aa2f3030f (MD5)en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:34:53Z (GMT). No. of bitstreams: 2 2-s2.0-0017480788.pdf: 502803 bytes, checksum: 79019e0a93d1706bb345166e8c650368 (MD5) 2-s2.0-0017480788.pdf.txt: 20908 bytes, checksum: 9e79732ba361ea87edc9563aa2f3030f (MD5) Previous issue date: 1977en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/97723
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/97723-
dc.contributor.departmentDepartamento de Física da Matéria Condensadapt_BR
dc.contributor.departmentDepartamento de Física da Matéria Condensadapt_BR
dc.contributor.departmentDepartamento de Física da Matéria Condensadapt_BR
dc.contributor.unidadeInstituto de Física "Gleb Wataghin"pt_BR
dc.description.abstractalternativeNous avons mesuré l'effet Raman à particule individuel le provoqué par electrons et trous photo-excités dans l'intérieur d'un crystal isolant de GaAs, en employant de la lumière IR de longueur d'onde égale à 1,06 ?m tant pour exciter le plasma comme pour le sonder. Pour obtenir la théorie nécessaire nous avons fait usage du concept de quasi-particule de Landau généralisée et nous indiquons comme peuvent devenir visibles des effets de plusieurs corps. Les résultats de l'expérience apportent confirmation indépendente au modéle de l'absorption à deux photons dans Le GaAs et nous permettent d'établir une limite inférieure égale à 1 × 1016 cm?3 pour la manifestation d'effets de saturation dans la densité de paires electron-trou photo- excités.-
dc.description.abstractalternativeNous avons mesuré l'effet Raman à particule individuel le provoqué par electrons et trous photo-excités dans l'intérieur d'un crystal isolant de GaAs, en employant de la lumière IR de longueur d'onde égale à 1,06 μm tant pour exciter le plasma comme pour le sonder. Pour obtenir la théorie nécessaire nous avons fait usage du concept de quasi-particule de Landau généralisée et nous indiquons comme peuvent devenir visibles des effets de plusieurs corps. Les résultats de l'expérience apportent confirmation indépendente au modéle de l'absorption à deux photons dans Le GaAs et nous permettent d'établir une limite inférieure égale à 1 × 1016 cm−3 pour la manifestation d'effets de saturation dans la densité de paires electron-trou photo- excités.pt_BR
dc.identifier.source2-s2.0-0017480788pt_BR
dc.creator.orcidSem informaçãopt_BR
dc.creator.orcidSem informaçãopt_BR
dc.creator.orcidSem informaçãopt_BR
dc.type.formArtigo de periódicopt_BR
dc.type.formArtigopt_BR
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