Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/97712
Type: Artigo de periódico
Title: Temperature Dependence Of The Radius Of Electron-hole Drops In Ge
Author: Grossman B.
Shaklee K.L.
Voos M.
Abstract: The temperature dependence of the radius of electron-hole drops in Ge is determined from measurements of the number of particles in the drops using the p-n junction technique. The drop radius is found to increase from 5.5μ at 1.7 K to 10μ at 3.2 K for an excitation intensity of 160 mWatt/mm2. As a function of excitation level at 1.8 K the drop radius is found to increase from 2.9μ at 8 mWatt/mm2 to 6.5μ at 300 mWatt/mm2. Our data are compared to results available in this field. © 1977.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0038-1098(77)91327-8
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0017525631&partnerID=40&md5=82117d1c568c59eaf0451311c49e1ca2
Date Issue: 1977
Appears in Collections:Unicamp - Artigos e Outros Documentos

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