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|Type:||Artigo de periódico|
|Title:||Temperature Dependence Of The Radius Of Electron-hole Drops In Ge|
|Abstract:||The temperature dependence of the radius of electron-hole drops in Ge is determined from measurements of the number of particles in the drops using the p-n junction technique. The drop radius is found to increase from 5.5μ at 1.7 K to 10μ at 3.2 K for an excitation intensity of 160 mWatt/mm2. As a function of excitation level at 1.8 K the drop radius is found to increase from 2.9μ at 8 mWatt/mm2 to 6.5μ at 300 mWatt/mm2. Our data are compared to results available in this field. © 1977.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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