Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Orientation Of The Basal Plane Of Single Crystals Of Gase Grown By Vertical Bridgman Technique
Author: Sampaio H.
Gouskov A.
Arguello Z.P.
Abstract: In this work we establish a simple procedure for determining the orientation of the basal plane of GaSe crystals grown by the vertical Bridgman technique. For this purpose we have used X-ray techniques along with etching and observation of the surface by optical microscopy. As a result we concluded that the direction of growth is always perpendicular to the direction of greatest density <1210> which always coincides with the minor axis of the ellipse formed naturally by cleaving the cylindrical single crystals. © 1977.
Rights: fechado
Identifier DOI: 10.1016/0022-0248(77)90055-0
Date Issue: 1977
Appears in Collections:Unicamp - Artigos e Outros Documentos

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