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|Type:||Artigo de periódico|
|Title:||Orientation Of The Basal Plane Of Single Crystals Of Gase Grown By Vertical Bridgman Technique|
|Abstract:||In this work we establish a simple procedure for determining the orientation of the basal plane of GaSe crystals grown by the vertical Bridgman technique. For this purpose we have used X-ray techniques along with etching and observation of the surface by optical microscopy. As a result we concluded that the direction of growth is always perpendicular to the direction of greatest density <1210> which always coincides with the minor axis of the ellipse formed naturally by cleaving the cylindrical single crystals. © 1977.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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