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Type: Artigo de periódico
Title: Chemical Bond Approach To The Electric Susceptibility Of Semiconductors. Ii
Author: Nucho R.N.
Ramos J.G.
Wolff P.A.
Abstract: The method previously developed to relate chemical bonds to the dielectric constant of elemental semiconductors is extended to the ionic tetrahedral III-V compounds. Expressions for the static dielectric constant and the average optical gap in terms of the generalized Wannier functions for the valence bands are obtained. Only two parameters are needed. The first is a measure of the antibonding character of the valence bands and the second is related to the ionic nature of these compounds. We have allowed the former to vary from compound to compound, while we have set the latter at a predetermined constant value, as prescribed by Coulson. We separate the energy gap into two analytical parts, "homopolar" and "heteropolar," thus directly confirming the ionicity scale established by Phillips. Finally, Coulson's definition of ionicity is reconciled with that of Phillips. © 1978 The American Physical Society.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.17.4835
Date Issue: 1978
Appears in Collections:Unicamp - Artigos e Outros Documentos

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