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Type: Artigo de periódico
Title: Threshold Behavior Of (gaal)as-gaas Lasers At Low Temperatures
Author: Hwang C.J.
Patel N.B.
Sacilotti M.A.
Prince F.C.
Bull D.J.
Abstract: The temperature dependence of the threshold current, differential quantum efficiency, and internal loss have been measured in the temperature range 10-293°K. The threshold current increases relatively slowly with temperature above 100°K and is independent of the impurity concentration. Theoretical calculation shows that this behavior is to be expected for a band-to-band transition that follows k selection. The threshold behavior at low temperatures (≤ 80°K) depends strongly on the type and concentration of the impurity. The relatively fast decrease in threshold below 100°K shows saturation for an active layer with n-type impurities or with high-concentration p-type impurities. The saturation is attributed to the carrier diffusion length becoming smaller than the active-layer thickness. The internal differential quantum efficiency is near unity and is independent of temperature. The internal loss, however, decreases with temperature due to reduction in free-carrier absorption.
Rights: aberto
Identifier DOI: 10.1063/1.324384
Date Issue: 1978
Appears in Collections:Unicamp - Artigos e Outros Documentos

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