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|Type:||Artigo de periódico|
|Title:||Threshold Behavior Of (gaal)as-gaas Lasers At Low Temperatures|
|Abstract:||The temperature dependence of the threshold current, differential quantum efficiency, and internal loss have been measured in the temperature range 10-293°K. The threshold current increases relatively slowly with temperature above 100°K and is independent of the impurity concentration. Theoretical calculation shows that this behavior is to be expected for a band-to-band transition that follows k selection. The threshold behavior at low temperatures (≤ 80°K) depends strongly on the type and concentration of the impurity. The relatively fast decrease in threshold below 100°K shows saturation for an active layer with n-type impurities or with high-concentration p-type impurities. The saturation is attributed to the carrier diffusion length becoming smaller than the active-layer thickness. The internal differential quantum efficiency is near unity and is independent of temperature. The internal loss, however, decreases with temperature due to reduction in free-carrier absorption.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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