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|Type:||Artigo de evento|
|Title:||Exponential Depletion Of Neutral Dangling Bonds Density (d 0) By Rare-earth Doping In Amorphous Si Films|
|Abstract:||In this work we study the effect reduction in the density of dangling bond species D 0 states in rare-earth (RE) doped a-Si films as a function concentration for different RE-specimens. The films a-Si 1-xRE x, RE=Y 3, Gd 3, Er 3, Lu 3) were prepared by co-sputtering and investigated by electron spin resonance (ESR) and Raman scattering experiments. According to our data the RE-doping reduces the ESR signal intensity of the D 0 states with an exponential dependence on the rare-concentration. Furthermore, the reduction produced by the magnetic rare-earths Gd 3 and Er 3 is remarkably greater than that caused by Y 3 and Lu 3, which led us to suggest an exchange-like coupling between the spin of the magnetic REs 3 and the spin of silicon neutral dangling bonds. © 2011 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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