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Type: Artigo de evento
Title: Exponential Depletion Of Neutral Dangling Bonds Density (d 0) By Rare-earth Doping In Amorphous Si Films
Author: Iwamoto W.
Zanatta A.R.
Rettori C.
Pagliuso P.G.
Abstract: In this work we study the effect reduction in the density of dangling bond species D 0 states in rare-earth (RE) doped a-Si films as a function concentration for different RE-specimens. The films a-Si 1-xRE x, RE=Y 3, Gd 3, Er 3, Lu 3) were prepared by co-sputtering and investigated by electron spin resonance (ESR) and Raman scattering experiments. According to our data the RE-doping reduces the ESR signal intensity of the D 0 states with an exponential dependence on the rare-concentration. Furthermore, the reduction produced by the magnetic rare-earths Gd 3 and Er 3 is remarkably greater than that caused by Y 3 and Lu 3, which led us to suggest an exchange-like coupling between the spin of the magnetic REs 3 and the spin of silicon neutral dangling bonds. © 2011 Elsevier B.V. All rights reserved.
Rights: fechado
Identifier DOI: 10.1016/j.physb.2011.12.071
Date Issue: 2012
Appears in Collections:Unicamp - Artigos e Outros Documentos

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