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Type: Artigo de periódico
Title: Electroreflectance In Gase1-xtex Solid Solutions
Author: Lemos V.
Cerdeira F.
Gouskov L.
Abstract: Room temperature electroreflectance measurements in the region of the lowest direct exciton were performed on the system GaSe1-xTex in the full composition range. A discontinuous jump in the dependence of exciton energy and broadening parameter occurs in the molar fraction range 0.26 ≤ x ≤ 0.60. This supports previous Raman measurements on these solid solutions which suggested the existence of two distinct phases: an hexagonal phase for x ≤ 0.26 and a monoclinic phase for x ≤ 0.60. Detailed study of broadening parameter as a function of molar fraction in the hexagonal phase suggests that the alloys have an indirect edge for low tellurium concentration but become direct as the latter increases. Line width considerations locates the crossing point between direct and indirect gaps at x {reversed tilde equals} 0.11, in good agreement with predictions made on volume change using the behaviour of direct and indirect edges in the alloy system GaSe1-xSx. © 1976.
Rights: fechado
Identifier DOI: 10.1016/0038-1098(76)90790-0
Date Issue: 1976
Appears in Collections:Unicamp - Artigos e Outros Documentos

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