Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/96517
Type: Artigo de periódico
Title: Effect Of Uniaxial Pressure On The Threshold Current Of Double-heterostructure Gaas Lasers
Author: Ripper J.E.
Patel N.B.
Brosson P.
Abstract: On application of uniaxial pressure perpendicular to the junction, the threshold current of GaAs double-heterostructure injection lasers at room temperature is observed to increase to a certain critical pressure P 0, and then decrease with further increase in pressure. A flip of the polarization of laser light occurs at P 0. This behavior can be explained using a model previously proposed to explain the reduction in threshold of homostructure GaAs lasers upon application of uniaxial pressure. © 1972 The American Institute of Physics.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.1654309
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-11544265805&partnerID=40&md5=c9f72e2ad42b779028ec7e4ee3e34a53
Date Issue: 1972
Appears in Collections:Unicamp - Artigos e Outros Documentos

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