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|Type:||Artigo de periódico|
|Title:||Effect Of Uniaxial Pressure On The Threshold Current Of Double-heterostructure Gaas Lasers|
|Abstract:||On application of uniaxial pressure perpendicular to the junction, the threshold current of GaAs double-heterostructure injection lasers at room temperature is observed to increase to a certain critical pressure P 0, and then decrease with further increase in pressure. A flip of the polarization of laser light occurs at P 0. This behavior can be explained using a model previously proposed to explain the reduction in threshold of homostructure GaAs lasers upon application of uniaxial pressure. © 1972 The American Institute of Physics.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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