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|Type:||Artigo de periódico|
|Title:||Physical Basis For The Negative Resistance In Double Heterostructure Injection Lasers|
|Abstract:||The previously observed negative resistance in double heterostructure diodes is shown to be caused by a trap generated potential barrier near the heterojunction nGa1-x Alx As-pGaAs. The filling and emplying times were measured by observing the breakdown of the barrier with single and double pulses. Time resolved spectral measurements confirm the model. © 1973 Springer-Verlag.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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