Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/96504
Type: Artigo de periódico
Title: Physical Basis For The Negative Resistance In Double Heterostructure Injection Lasers
Author: Grossman B.
Ripper J.E.
Patel N.
Pinatti D.G.
Leite R.C.C.
Abstract: The previously observed negative resistance in double heterostructure diodes is shown to be caused by a trap generated potential barrier near the heterojunction nGa1-x Alx As-pGaAs. The filling and emplying times were measured by observing the breakdown of the barrier with single and double pulses. Time resolved spectral measurements confirm the model. © 1973 Springer-Verlag.
Editor: Springer-Verlag
Rights: fechado
Identifier DOI: 10.1007/BF00884206
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-34250438686&partnerID=40&md5=91bf0ff4beea69f07c2d51f12997f5d1
Date Issue: 1973
Appears in Collections:Unicamp - Artigos e Outros Documentos

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