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|Type:||Artigo de periódico|
|Title:||Very High Non-thermal Equilibrium Population Of Optical Phonons In Gaas|
|Author:||Gallego Lluesma E.|
|Abstract:||Extremely high equivalent temperatures of optical phonons were obtained in GaAs without detectable increase in the lattice temperature. The improvement upon previous experiment was due to the use of a pulsed Nd:Yag laser which was doubled by the GaAs sample itself and absorbed in its bulk. The non-equilibrium LO-phonon population attained before crystal breakdown was ∼ 27 times larger than the thermal equilibrium population at the room temperature (290K). The equivalent temperature observed for LO-phonons was ∼3700K. © 1974.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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