Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/96417
Type: Artigo de periódico
Title: Ingaas/inp Quantum Wells With Periodic Thickness Variation
Author: Bernussi A.A.
Brasil M.J.S.P.
Brum J.A.
Cotta M.A.
Hamm R.A.
Staley T.W.
Chu S.N.G.
Harriott L.R.
Panish M.B.
Temkin H.
Abstract: We investigated the optical and structural properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy. The growth conditions were chosen to provide a patterned InP buffer layer surface with elongated features aligned in the [011] direction. The morphology of the patterned surface was revealed by transmission electron and scanning force microscopy measurements. Low temperature photoluminescence results are correlated with teh structural properties of the samples. The observation of multiple emission lines indicates the presence of elongated terraces with different thicknesses at the interface of the single quantum well. Information about the carrier dynamics between these elongated terraces is obtained from the photoluminescence temperature dependence. © 1994.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0038-1101(94)90268-2
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0028409285&partnerID=40&md5=3a21eb7c5216e7d0ec88ae10056545e6
Date Issue: 1994
Appears in Collections:Unicamp - Artigos e Outros Documentos

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