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|Type:||Artigo de evento|
|Title:||Temperature Dependence Of Morphology Of Inp Films Grown By Metalorganic Molecular Beam Epitaxy|
|Abstract:||Two regimes of growth are observed for epitaxial films of InP prepared by metalorganic molecular beam epitaxy. Below a minimum growth temperature, Tg min, kinetic roughening is observed. At temperatures higher than Tg min, smooth morphologies are obtained. From the dependence of Tg min, on the substrate misorientation, we estimate a value of nearly 0.4-0.5 eV for the Schwoebel barrier. At growth temperatures higher than Tg min we observe two types of defects: large oval defects related only to the initial conditions of the substrate surface and small defects with the density strongly dependent on the growth condition. Increasing temperature above Tg min, or decreasing V/III ratio, results in increased density of these defects. In addition, their density increases with an activation energy that depends on the substrate misorientation. The origin of the oval defects in attributed to non-stoichiometric, P-defficient, clusters on the growing surface, formed either by enhanced cracking of metalorganics on the substrate due to the presence of contamination or by a low V/III ratio used for growth.|
|Editor:||Publ by Materials Research Society, Pittsburgh, PA, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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