Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/96167
Type: Artigo de periódico
Title: Band-gap Shift In Cds Semiconductor By Photoacoustic Spectroscopy: Evidence Of A Cubic To Hexagonal Lattice Transition
Author: Zelaya-Angel O.
Alvarado-Gil J.J.
Lozada-Morales R.
Vargas H.
Ferreira Da Silva A.
Abstract: The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.111184
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001280054&partnerID=40&md5=ab9070d8349653a4449627274c47790e
Date Issue: 1994
Appears in Collections:Unicamp - Artigos e Outros Documentos

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