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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbnpt
dc.typeArtigo de periódicopt_BR
dc.titleMorphological Studies Of Laser Etching Processes In Self Sustained Cvd Diamond Waferspt_BR
dc.contributor.authorBaranauskas V.pt_BR
dc.contributor.authorPeled A.pt_BR
dc.contributor.authorTrava-Airoldi V.J.pt_BR
dc.contributor.authorLima C.A.S.pt_BR
dc.contributor.authorDoi I.pt_BR
dc.contributor.authorCorat E.J.pt_BR
unicamp.authorBaranauskas, V., Electrical Engineering Faculty, Department of Semiconductors and Photonics, State University of Campinas, P.O. Box 6101, Campinas, 13081-970 SP, Brazilpt_BR
unicamp.authorLima, C.A.S., Instituto de Física Gleb Whataghin, Universidade Estadual de Campinas, P.O. Box 6101, Campinas, 13081-970 SP, Brazilpt_BR
unicamp.authorDoi, I., Electrical Engineering Faculty, Department of Semiconductors and Photonics, State University of Campinas, P.O. Box 6101, Campinas, 13081-970 SP, Brazilpt_BR
unicamp.author.externalPeled, A., Center for Technological Education Holon, aff. Tel-Aviv University, Electronics Department, 52 Golomb Street, Holon, 58102, Israelpt
unicamp.author.externalTrava-Airoldi, V.J., National Institute for Space Research - INPE, P.O. Box 515, São Jose dos Campos, 12201 SP, Brazilpt
unicamp.author.externalCorat, E.J., National Institute for Space Research - INPE, P.O. Box 515, São Jose dos Campos, 12201 SP, Brazilpt
dc.description.abstractThis study reports the first results obtained by cutting/etching high quality synthesized diamond wafers of thickness up to 525 μm using a Nd: YAG laser. Energy pulses of 1-5 mJ, repetition rates of 100-50000 Hz and pulse width of 250 ns have been used. The diamond wafers/films were synthesized by CVD of carbon from a diluted methane/freon gas mixture in hydrogen using a hot-filament reactor. It was found that the laser-material cutting/etching mechanisms involve first the graphitization of the grains and then oxidation in air. SEM microscopy was used to observe the surface morphology of the laser cuts revealing a columnar CVD grain growth which is very useful for heat dissipation elements in electro-optical devices. It was found that for deep grooves the cutting width is limited by the grain size of the polycrystalline wafers/films. High profile cutting aspect ratios of the order of 7-12 were obtained. Specific cutting energies employed were of the order of 200 kJ/g. © 1994.en
dc.relation.ispartofApplied Surface Sciencept_BR
dc.publisherpt_BR
dc.date.issued1994pt_BR
dc.identifier.citationApplied Surface Science. , v. 79-80, n. C, p. 129 - 135, 1994.pt_BR
dc.language.isoenpt_BR
dc.description.volume79-80pt_BR
dc.description.issuenumberCpt_BR
dc.description.initialpage129pt_BR
dc.description.lastpage135pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn1694332pt_BR
dc.identifier.doi10.1016/0169-4332(94)90400-6pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-4243937544&partnerID=40&md5=b92ebc89112f9a6caa851a6278fcb4afpt_BR
dc.date.available2015-06-26T17:26:56Z
dc.date.available2015-11-26T14:21:37Z-
dc.date.accessioned2015-06-26T17:26:56Z
dc.date.accessioned2015-11-26T14:21:37Z-
dc.description.provenanceMade available in DSpace on 2015-06-26T17:26:56Z (GMT). No. of bitstreams: 1 2-s2.0-4243937544.pdf: 644951 bytes, checksum: a9038da35f76df07e6e1fceefbe47cde (MD5) Previous issue date: 1994en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:21:37Z (GMT). No. of bitstreams: 2 2-s2.0-4243937544.pdf: 644951 bytes, checksum: a9038da35f76df07e6e1fceefbe47cde (MD5) 2-s2.0-4243937544.pdf.txt: 18407 bytes, checksum: bd1394bac020189986f52a01176ac925 (MD5) Previous issue date: 1994en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/96163
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/96163-
dc.identifier.idScopus2-s2.0-4243937544pt_BR
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