Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/96123
Type: Artigo de periódico
Title: Ingaas/inp Quantum Wells With Thickness Modulation
Author: Brasil M.J.S.P.
Bernussi A.A.
Cotta M.A.
Marquezini M.V.
Brum J.A.
Hamm R.A.
Chu S.N.G.
Harriott L.R.
Temkin H.
Abstract: We investigated the optical properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer layers with elongated features along the [01̄1] direction. The resulting quantum wells present a periodic thickness variation following the elongated features. Low temperature luminescence measurements exhibit double emission bands, attributed to distinct regions of the well. Temperature evolution of the photoluminescence spectra gives qualitative information about the effect of exciton localization.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.112182
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0042386883&partnerID=40&md5=9471064e424a5dc09631fdff2cca7f34
Date Issue: 1994
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0042386883.pdf766.2 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.