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|Type:||Artigo de periódico|
|Title:||A Simple Technique For Czochralski Growth Of Gasb Single Crystals From Scum-free Melt|
|Author:||de Oliveira C.E.M.|
de Carvalho M.M.G.
|Abstract:||A simple technique for synthesis and growth of GaSb crystals from a scum-free melt has been developed. The key element in this technique is the chemical and thermal treatment of gallium in vacuum before growth. This technique does not require the use of a pure hydrogen ambient nor the two-step process nor the double-crucible technique. Undoped and Te-doped 25 mm diameter GaSb single crystals of 〈100〉 orientation have been successfully grown by this technique with typical carrier concentrations of 1.0 × 1017 cm-3 and mobility of 717 cm2/V · s for undoped samples. © 1995.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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