Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/96071
Type: Artigo de periódico
Title: Spatially Variable Reaction In The Formation Of Anodically Grown Porous Silicon Structures
Author: Teschke O.
Dos Santos M.C.
Kleinke M.U.
Soares D.M.
Galvao D.S.
Abstract: In porous silicon formations there is an increase of dissolution rate at the fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from oxidation of molecular hydrogen at the passivated (hydrogen-covered) sites. The dissolution rate increase in the presence of excess charge at the fluorine-covered sites is experimentally measured and a theoretical investigation is carried out by a semiempirical Hartree-Fock calculation. This spatially variable dissolution generates the porous silicon surface. © 1995 American Institute of Physics.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.360577
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001312243&partnerID=40&md5=13cdfbebbc1090ee18abc321140e1e0c
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

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