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|Type:||Artigo de periódico|
|Title:||Anodically Grown Porous Silicon Structure: Formation Mechanisms|
dos Santos M.C.
|Abstract:||It is experimentally shown, in porous silicon formation, that there is an increase in dissolution rate at fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from the oxidation of molecular hydrogen at hydrogen-covered sites. The increase in dissolution rate in the presence of excess charge at the fluorine-covered sites is investigated theoretically by a semi-empirical Hartree-Fock calculation which shows that this spatially variable dissolution generates the porous silicon structure. © 1995.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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