Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/96051
Type: Artigo de periódico
Title: Anodically Grown Porous Silicon Structure: Formation Mechanisms
Author: Soares D.M.
dos Santos M.C.
Teschke O.
Abstract: It is experimentally shown, in porous silicon formation, that there is an increase in dissolution rate at fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from the oxidation of molecular hydrogen at hydrogen-covered sites. The increase in dissolution rate in the presence of excess charge at the fluorine-covered sites is investigated theoretically by a semi-empirical Hartree-Fock calculation which shows that this spatially variable dissolution generates the porous silicon structure. © 1995.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0009-2614(95)00700-E
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-4243545063&partnerID=40&md5=d28eff4d664ba1633b391b5ea350eb03
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-4243545063.pdf396.82 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.