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Type: Artigo de periódico
Title: Anodically Grown Porous Silicon Structure: Formation Mechanisms
Author: Soares D.M.
dos Santos M.C.
Teschke O.
Abstract: It is experimentally shown, in porous silicon formation, that there is an increase in dissolution rate at fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from the oxidation of molecular hydrogen at hydrogen-covered sites. The increase in dissolution rate in the presence of excess charge at the fluorine-covered sites is investigated theoretically by a semi-empirical Hartree-Fock calculation which shows that this spatially variable dissolution generates the porous silicon structure. © 1995.
Rights: fechado
Identifier DOI: 10.1016/0009-2614(95)00700-E
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

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