Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95992
Type: Artigo de periódico
Title: Structural Studies On Inp/gaas Heterostructures Using Multiple X-ray Diffraction
Author: Morelhao S.L.
Avanci L.H.
Cardoso L.P.
Riesz F.
Rakennus K.
Hakkarainen T.
Abstract: InP epitaxial layers grown by gas-source molecular beam epitaxy on (100) GaAs substrates were characterized using three-beam multiple X-ray diffraction. The mosaic spread along the [01̄1] and [011̄] directions and the in-plane epilayer lattice parameter are determined from computer simulations. The effects of nucleation temperature, buffer layer type and post-growth annealing and substrate misorientation are studied. © 1995.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0042-207X(95)00095-X
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029358897&partnerID=40&md5=eb6431098c1678633789219c46b1641a
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

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