Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95821
Type: Artigo de periódico
Title: On Surface Plasmons In Porous Silicon: Measurements Of The Electron Energy Loss In Etched Silicon Nanocrystals
Author: Sassaki R.M.
Galembeck F.
Teschke O.
Abstract: Surface plasmons resulting from the interaction of the electron beam of a transmission electron microscope with porous silicon nanoparticles were measured. The inelastic scattering of fast electrons in H-covered silicon nanocylinders shows a peak at ∼5.5 eV. A gradual decrease of the first and second order plasma volumetric absorption simultaneous with a constant surface mode absorption amplitude was measured for decreasing silicon-slab thicknesses. Competitions between bulk and surface effects show, for the volume mode peak at 16.9 eV, a damping factor increase of ∼5 eV. The measured silicon particle diameter was ∼15 Å and a value of the dielectric constant is estimated from the surface plasmon data at 8.5, which is in agreement with recent theoretical work on the modified dielectric constant in quantum confined systems. © 1996 American Institute of Physics.
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Rights: aberto
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-36449003981&partnerID=40&md5=cfe8fa154a5cb3a773047c12416e2fd2
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

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